SiGe SEG growth for buried channel p-MOS devices

Hikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooWitters, LiesbethLiesbethWittersTakeoka, ShinjiShinjiTakeokaGeypen, JefJefGeypenBrijs, BertBertBrijsMerckling, ClementClementMercklingCaymax, MattyMattyCaymaxDekoster, JohanJohanDekoster2021-10-172021-10-172009-10https://imec-publications.be/handle/20.500.12860/15479SiGe SEG growth for buried channel p-MOS devicesProceedings paper