Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

Nguyen, DuyDuyNguyenRosseel, ErikErikRosseelTakeuchi, ShotaroShotaroTakeuchiEveraert, Jean-LucJean-LucEveraertYang, LijunLijunYangGoossens, JozefienJozefienGoossensMoussa, AlainAlainMoussaClarysse, TrudoTrudoClarysseLoo, RogerRogerLooLin, VicVicLinVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymax2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15921Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technologyMeeting abstract