Xi, FengbenFengbenXiSharma, HimanshuHimanshuSharmaWu, XiangyuXiangyuWuVerreck, DevinDevinVerreckCott, DaireDaireCottGrubbs, Robert K.Robert K.GrubbsNgo, Tien DatTien DatNgoKumar, PawanPawanKumarMorin, PierrePierreMorinGroven, BenjaminBenjaminGrovende Marneffe, Jean-FrancoisJean-Francoisde Marneffevan Dorp, DennisDennisvan DorpGhosh, SouvikSouvikGhoshLin, ZaoyangZaoyangLinNalin Mehta, AnkitAnkitNalin MehtaChen, ZhuoZhuoChenSutar, SurajitSurajitSutarSchram, TomTomSchramSmets, QuentinQuentinSmetsLin, DennisDennisLinBanerjee, KaustuvKaustuvBanerjeeLockhart de la Rosa, Cesar JavierCesar JavierLockhart de la RosaGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKar2026-07-072026-07-0720242380-9248https://imec-publications.be/handle/20.500.12860/59763In this work, stacked nanosheet FETs with monolayer MoS2 channels are presented. At a channel length of 40 nm, the transistor exhibits a remarkable ION−451 μA/μm at VDS=1 V, achieved with two tiers of monolayer-MoS2 channels. The device has a record ION/IOFF>109 and a yield of 96.59%, which shows good electro-static control in the nanosheet channels. We compare these results to dual gate 2D FETs and show how learnings on the planar devices can be utilized in a gate-all-around case. The successful demonstration of stacked 2D nanosheet FETs with high performance further extends Moore's Law scaling with the future 2D CFETs application.engProceedings paper10.1109/iedm50854.2024.10873412WOS:001692734400094