Dangling bond defects in silicon-passivated strained-Si1xGex channel layers

Madia, OresteOresteMadiaKepa, JacekJacekKepaAfanas'ev, ValeriValeriAfanas'evFranco, JacopoJacopoFrancoKaczer, BenBenKaczerHikavyy, AndriyAndriyHikavyyStesmans, AndreAndreStesmans2021-10-292021-10-2920200957-4522https://imec-publications.be/handle/20.500.12860/35520Dangling bond defects in silicon-passivated strained-Si1xGex channel layersJournal articlehttps://doi.org/10.1007/s10854-019-01098-2