Alawneh, IsamIsamAlawnehSimoen, EddyEddySimoenBiesemans, SergeSergeBiesemansDe Meyer, KristinKristinDe MeyerClaeys, C.C.Claeys2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2335Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 KJournal article