Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates

Van Elshocht, SvenSvenVan ElshochtCaymax, MattyMattyCaymaxDe Gendt, StefanStefanDe GendtConard, ThierryThierryConardPetry, JasmineJasminePetryDate, LucienLucienDatePique, DidierDidierPiqueHeyns, MarcMarcHeyns2021-10-152021-10-152004-03https://imec-publications.be/handle/20.500.12860/9744Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substratesJournal article