Quantitative two-dimensional carrier mapping in silicon nanowire-based tunnel-field effect transistors with sub-3nm resolution

Schulze, AndreasAndreasSchulzeHantschel, ThomasThomasHantschelEyben, PierrePierreEybenVandooren, AnneAnneVandoorenRooyackers, RitaRitaRooyackersMody, JayJayModyVerhulst, AnneAnneVerhulstVandervorst, WilfriedWilfriedVandervorst2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17963Quantitative two-dimensional carrier mapping in silicon nanowire-based tunnel-field effect transistors with sub-3nm resolutionProceedings paper