High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects

Trojman, LionelLionelTrojmanPantisano, LuigiLuigiPantisanoRagnarsson, Lars-AkeLars-AkeRagnarsson2021-10-202021-10-2020120018-9383https://imec-publications.be/handle/20.500.12860/21636High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effectsJournal article