MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

Vellianitis, G.G.VellianitisApostolopoulos, G.G.ApostolopoulosMavrou, G.G.MavrouArgyropoulos, K.K.Argyropoulosdimoulas, A.A.dimoulasHooker, JacobJacobHookerConard, ThierryThierryConardButcher, M.M.Butcher2021-10-152021-10-152004-06https://imec-publications.be/handle/20.500.12860/9846MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacementJournal article