Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers

O'Sullivan, BarryBarryO'SullivanRathi, AartiAartiRathiAlian, AlirezaAlirezaAlianYadav, SachinSachinYadavYu, HaoHaoYuSibaja-Hernandez, ArturoArturoSibaja-HernandezPeralagu, UthayasankaranUthayasankaranPeralaguParvais, BertrandBertrandParvaisVaisman Chasin, AdrianAdrianVaisman ChasinCollaert, NadineNadineCollaert2025-01-232024-09-102025-01-2320242072-666XWOS:001304850000001https://imec-publications.be/handle/20.500.12860/44455Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power AmplifiersJournal article10.3390/mi15080951WOS:001304850000001MEDLINE:39203602