Guidelines for reducing NBTI based on its correlation with effective work function studied by CV-BTI on high-k first MOS capacitors with slant etched SiO2

Arimura, HiroakiHiroakiArimuraRagnarsson, Lars-AkeLars-AkeRagnarssonSchram, TomTomSchramAlbert, JohanJohanAlbertKaczer, BenBenKaczerDegraeve, RobinRobinDegraeveBury, ErikErikBuryAoulaiche, MarcMarcAoulaicheKauerauf, ThomasThomasKaueraufThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchiGroeseneken, GuidoGuidoGroeseneken2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23498Guidelines for reducing NBTI based on its correlation with effective work function studied by CV-BTI on high-k first MOS capacitors with slant etched SiO2Proceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6860624&contentType=Conference+Publications