Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology

Veloso, AnabelaAnabelaVelosoDemuynck, StevenStevenDemuynckErcken, MoniqueMoniqueErckenGoethals, MiekeMiekeGoethalsLocorotondo, SabrinaSabrinaLocorotondoLazzarino, FredericFredericLazzarinoAltamirano Sanchez, EfrainEfrainAltamirano SanchezHuffman, CraigCraigHuffmanDe Keersgieter, AnAnDe KeersgieterBrus, StephanStephanBrusDemand, MarcMarcDemandStruyf, HerbertHerbertStruyfDe Backer, JohanJohanDe BackerHermans, JanJanHermansDelvaux, ChristieChristieDelvauxBaudemprez, BartBartBaudemprezVandeweyer, TomTomVandeweyerVan Roey, FriedaFriedaVan RoeyBaerts, ChristinaChristinaBaertsGoossens, DannyDannyGoossensDekkers, HaroldHaroldDekkersOng, PatrickPatrickOngHeylen, NancyNancyHeylenKellens, KristofKristofKellensVolders, HennyHennyVoldersHikavyy, AndriyAndriyHikavyyVrancken, ChristaChristaVranckenRakowski, MichalMichalRakowskiVerhaegen, StafStafVerhaegenDusa, MirceaMirceaDusaRomijn, LeonLeonRomijnPigneret, CharlesCharlesPigneretvan Dijk, AndreAndrevan DijkSchreutelkamp, RobRobSchreutelkampCockburn, AndrewAndrewCockburnGravey, VirginieVirginieGraveyMeiling, H.H.MeilingHultermans, B.B.HultermansLok, S.S.LokShah, K.K.ShahRajagopalan, R.R.RajagopalanGelatos, J.J.GelatosRichard, OlivierOlivierRichardBender, HugoHugoBenderVandenberghe, GeertGeertVandenbergheBeyer, GeraldGeraldBeyerAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.HoffmannRonse, KurtKurtRonseBiesemans, SergeSergeBiesemans2021-10-182021-10-182009-12https://imec-publications.be/handle/20.500.12860/16454Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technologyProceedings paper