Quantitative description of the strain field around {111} planar defects in hydrogenated silicon wafers

Ghica, C.C.GhicaNistor, L.C.L.C.NistorRichard, OlivierOlivierRichardBender, HugoHugoBenderUlyashin, AliaksandrAliaksandrUlyashinVan Tendeloo, G.G.Van Tendeloo2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8961Quantitative description of the strain field around {111} planar defects in hydrogenated silicon wafersProceedings paper