The influence of oxygen on the Hf signal intensity in the characterisation of HfO2/Si stacks

Huyghebaert, CedricCedricHuyghebaertConard, ThierryThierryConardVandervorst, WilfriedWilfriedVandervorst2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7671The influence of oxygen on the Hf signal intensity in the characterisation of HfO2/Si stacksMeeting abstract