Waldron, NiamhNiamhWaldronNguyen, DuyDuyNguyenLin, DennisDennisLinBrammertz, GuyGuyBrammertzVincent, BenjaminBenjaminVincentFirrincieli, AndreaAndreaFirrincieliWinderickx, GillisGillisWinderickxSioncke, SonjaSonjaSionckeDe Jaeger, BriceBriceDe JaegerWang, GangGangWangMitard, JeromeJeromeMitardWang, Wei-EWei-EWangHeyns, MarcMarcHeynsCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/20125Heterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environmentProceedings paper