Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates

Li, ZilanZilanLiSchram, TomTomSchramPantisano, LuigiLuigiPantisanoWitters, ThomasThomasWittersStesmans, AndreAndreStesmansAkheyar, AmalAmalAkheyarAfanasiev, ValeriValeriAfanasievYamada, NaokiNaokiYamadaTsunoda, TakaakiTakaakiTsunodaDe Gendt, StefanStefanDe GendtDe Meyer, KristinKristinDe Meyer2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12485Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gatesJournal article