Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications

Simoen, EddyEddySimoenRitzenthaler, RomainRomainRitzenthalerCho, Moon JuMoon JuChoSchram, TomTomSchramHoriguchi, NaotoNaotoHoriguchiAoulaiche, MarcMarcAoulaicheSpessot, AlessioAlessioSpessotFazan, PierrePierreFazanClaeys, CorCorClaeys2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25912Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applicationsProceedings paperhttp://ecst.ecsdl.org/content/69/10/281.abstract