Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT's

Carpi, EnioEnioCarpiVan Hove, MarleenMarleenVan HoveVan Rossum, MarcMarcVan Rossum2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/66Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT'sOral presentation