Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices

Guo, WeimingWeimingGuoGeens, KarenKarenGeensZhao, MingMingZhaoBehmenburg, HannesHannesBehmenburgFahle, DirkDirkFahleOdnoblyudov, VladVladOdnoblyudovBasceri, CemCemBasceriAktas, OzgurOzgurAktasDecoutere, StefaanStefaanDecoutere2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30819Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devicesMeeting abstracthttp://www.iwn2018.jp/IWN2018-Program.pdf