First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices

Ajaykumar, ArjunArjunAjaykumarBreuil, LaurentLaurentBreuilKatcko, KostantineKostantineKatckoSchleicher, FilipFilipSchleicherSebaai, FaridFaridSebaaiOniki, YusukeYusukeOnikiRamesh, SivaSivaRameshArreghini, AntonioAntonioArreghiniNyns, LauraLauraNynsSoulie, Jean-PhilippeJean-PhilippeSoulieStiers, JimmyJimmyStiersRosmeulen, MaartenMaartenRosmeulenVan den Bosch, GeertGeertVan den Bosch2021-10-312021-10-312021https://imec-publications.be/handle/20.500.12860/36439First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devicesProceedings paperhttps://ieeexplore.ieee.org/document/9508691