Vincent, BenjaminBenjaminVincentLoo, RogerRogerLooVandervorst, WilfriedWilfriedVandervorstBrammertz, GuyGuyBrammertzCaymax, MattyMattyCaymax2021-10-192021-10-1920100022-0248https://imec-publications.be/handle/20.500.12860/18302Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilaneJournal article