Ab initio analysis of defect formation and dopant activation in P and As co-doped Si

Nakazaki, NobuyaNobuyaNakazakiRosseel, ErikErikRosseelPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchiPourtois, GeoffreyGeoffreyPourtois2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33647Ab initio analysis of defect formation and dopant activation in P and As co-doped SiMeeting abstract