Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding With sub-300 nm Alignment Precision

Marinins, AleksandrsAleksandrsMarininsHansch, SebastianSebastianHanschSar, HuseyinHuseyinSarChancerel, FrancoisFrancoisChancerelGolshani, NeginNeginGolshaniWang, Hsiao-LunHsiao-LunWangTsiara, ArtemisiaArtemisiaTsiaraCoenen, DavidDavidCoenenVerheyen, PeterPeterVerheyenCapuz, GiovanniGiovanniCapuzDe Koninck, YannickYannickDe KoninckYilmaz, OzanOzanYilmazMorthier, GeertGeertMorthierSchleicher, FilipFilipSchleicherJamieson, GeraldineGeraldineJamiesonSmyth, StuartStuartSmythMcKee, AndrewAndrewMcKeeBan, YoojinYoojinBanPantouvaki, MariannaMariannaPantouvakiLa Tulipe, Douglas CharlesDouglas CharlesLa TulipeVan Campenhout, JorisJorisVan Campenhout2023-03-302023-01-152023-03-3020231077-260XWOS:000905311600006https://imec-publications.be/handle/20.500.12860/40980Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding With sub-300 nm Alignment PrecisionJournal article10.1109/JSTQE.2022.3223641WOS:000905311600006