Hole mobility in Ge and GaAs p-channel inversion layers with low-k insulator

Zhang, YanYanZhangFischetti, MassimoMassimoFischettiSoree, BartBartSoreeMagnus, WimWimMagnusHeyns, MarcMarcHeyns2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14839Hole mobility in Ge and GaAs p-channel inversion layers with low-k insulatorProceedings paper