High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD

Mitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersGarcia Bardon, MarieMarieGarcia BardonChristie, PhillipPhillipChristieFranco, JacopoJacopoFrancoMercha, AbdelkarimAbdelkarimMerchaMagnone, PaoloPaoloMagnoneCrupi, FeliceFeliceCrupiRagnarsson, Lars-AkeLars-AkeRagnarssonHikavyy, AndriyAndriyHikavyyVincent, BenjaminBenjaminVincentChiarella, ThomasThomasChiarellaLoo, RogerRogerLooTseng, JoshuaJoshuaTsengYamaguchi, ShinpeiShinpeiYamaguchiTakeoka, ShinjiShinjiTakeokaWang, Wei-EWei-EWangAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17643High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDDProceedings paper