Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Stoffels, SteveSteveStoffelsPosthuma, NielsNielsPosthumaDecoutere, StefaanStefaanDecoutereBakeroot, BenoitBenoitBakerootTallarico, Andrea NataleAndrea NataleTallaricoSangiorgi, EnricoEnricoSangiorgiFiegna, ClaudioClaudioFiegnaZheng, JiaxinJiaxinZhengMa, X.X.MaBorga, MatteoMatteoBorgaFabris, ElenaElenaFabrisMeneghini, MatteoMatteoMeneghiniZanoni, EnricoEnricoZanoniMeneghesso, GaudenzioGaudenzioMeneghessoPriesol, JurajJurajPriesolSatka, AlexanderAlexanderSatka2021-10-272021-10-272019-04https://imec-publications.be/handle/20.500.12860/34072Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate ReliabilityProceedings paperhttps://ieeexplore.ieee.org/document/8720411