Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselMitard, JeromeJeromeMitardSioncke, SonjaSonjaSionckeWitters, LiesbethLiesbethWittersMertens, HansHansMertensGrasser, TiborTiborGrasserGroeseneken, GuidoGuidoGroeseneken2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22360Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacksProceedings paper