On the characterization of the strain field of lattice defects in silicon with nanometer resolution

Janssens, KoenraadKoenraadJanssensVan der Biest, O.O.Van der BiestVanhellemont, JanJanVanhellemontMaes, HermanHermanMaes2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/206On the characterization of the strain field of lattice defects in silicon with nanometer resolutionProceedings paper