Sheng, CassieCassieShengDemuynck, StevenStevenDemuynckStiers, KarenKarenStiersPeng, A.A.PengToledo de Carvalho Cavalcante, CamilaCamilaToledo de Carvalho CavalcanteChiarella, ThomasThomasChiarellaVandooren, AnneAnneVandoorenHosseini, MaryamMaryamHosseiniBatuk, DmitryDmitryBatukPuttarame Gowda, PallaviPallaviPuttarame GowdaSebaai, FaridFaridSebaaiVandersmissen, KevinKevinVandersmissenChukka, RamiRamiChukkaDi Donato, L.L.Di DonatoSun, W.W.SunHasan, MahmudulMahmudulHasanWeldeslassie, AtakltiAtakltiWeldeslassieCerbu, DorinDorinCerbuJourdan, NicolasNicolasJourdanMingardi, AndreaAndreaMingardiSaroj, Rajendra KumarRajendra KumarSarojSarkar, Sujan KumarSujan KumarSarkarIacovo, SerenaSerenaIacovoMontero Alvarez, DanielDanielMontero AlvarezSarkar, T.T.SarkarShen, T-H.T-H.ShenBogdanowicz, JanuszJanuszBogdanowiczMurdoch, GayleGayleMurdochMitard, JeromeJeromeMitardReddy, NaveenNaveenReddyKoo, Il GyoIl GyoKooAltamirano Sanchez, EfrainEfrainAltamirano SanchezCharley, Anne-LaureAnne-LaureCharleyPetersen Barbosa Lima, LucasLucasPetersen Barbosa LimaHoriguchi, NaotoNaotoHoriguchiBiesemans, SergeSergeBiesemans2026-03-192026-03-192025979-8-3315-3782-12380-632Xhttps://imec-publications.be/handle/20.500.12860/58874This work explores the integration challenges of direct backside contact (DBC) to the source and drain (SD) of the bottom PMOS in complementary field-effect transistors (CFET). We investigate various contact failures, including backside bottom contact opens and via contact opens. Through root cause analysis, we apply multiple integration approaches to mitigate these challenges. Our results demonstrate a significant improvement in PMOS DBC enhancing contact success rate.engProceedings paper10.1109/IITC66087.2025.11075391WOS:001554227600031