Marcon, DenisDenisMarconLorenz, AnneAnneLorenzDerluyn, JoffJoffDerluynDas, JoJoDasMedjdoub, FaridFaridMedjdoubCheng, KaiKaiChengDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysMertens, RobertRobertMertensGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14119Preliminary reliability assessment of GaN-on-Si HEMT using in-situ Si3N4 cap layerMeeting abstract