Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Cantoro, MircoMircoCantoroMerckling, ClementClementMercklingJiang, SijiaSijiaJiangGuo, WeimingWeimingGuoWaldron, NiamhNiamhWaldronBender, HugoHugoBenderMoussa, AlainAlainMoussaDouhard, BastienBastienDouhardVandervorst, WilfriedWilfriedVandervorstHeyns, MarcMarcHeynsDekoster, JohanJohanDekosterLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20416Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffersProceedings paper