Process options to enable (Sub-)1e-9 Ohm.cm2 contact resistivity on Si devices

Yu, HaoHaoYuSchaekers, MarcMarcSchaekersDemuynck, StevenStevenDemuynckRosseel, ErikErikRosseelEveraert, Jean-LucJean-LucEveraertChew, Soon AikSoon AikChewPeter, AntonyAntonyPeterKubicek, StefanStefanKubicekBarla, KathyKathyBarlaMocuta, AndaAndaMocutaHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertThean, AaronAaronTheanDe Meyer, KristinKristinDe Meyer2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27639Process options to enable (Sub-)1e-9 Ohm.cm2 contact resistivity on Si devicesProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7507683