Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si

Stesmans, AndreAndreStesmansAfanas'ev, V. V.V. V.Afanas'evHoussa, MichelMichelHoussa2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5675Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)SiOral presentation