Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO2-Based Ferroelectric FET

Higashi, YusukeYusukeHigashiRonchi, NicoloNicoloRonchiKaczer, BenBenKaczerAlam, Md Nur KutubulMd Nur KutubulAlamO'Sullivan, BarryBarryO'SullivanBanerjee, KaustuvKaustuvBanerjeeMcMitchell, SeanSeanMcMitchellBreuil, LaurentLaurentBreuilWalke, AmeyAmeyWalkeVan den Bosch, GeertGeertVan den BoschLinten, DimitriDimitriLintenVan Houdt, JanJanVan Houdt2022-02-242022-02-2420210018-9383WOS:000686761500037https://imec-publications.be/handle/20.500.12860/39126Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO2-Based Ferroelectric FETJournal article10.1109/TED.2021.3096510WOS:000686761500037OXIDE