Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain

Mellaerts, SimonSimonMellaertsAfanas'ev, ValeriValeriAfanas'evSeo, Jin WonJin WonSeoHoussa, MichelMichelHoussaLocquet, Jean-PierreJean-PierreLocquet2022-09-012021-11-022022-09-0120211944-8244WOS:000672492800067https://imec-publications.be/handle/20.500.12860/37801Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional StrainJournal article10.1021/acsami.1c03700WOS:000672492800067SEMICONDUCTORSPRESSUREEMISSIONMOBILITYGROWTHGESIMEDLINE:34157228