Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts

Huang, Yan-HuaYan-HuaHuangPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyRengo, GianlucaGianlucaRengoYu, HaoHaoYuSchaekers, MarcMarcSchaekersEveraert, Jean-LucJean-LucEveraertHeyns, MarcMarcHeynsLoo, RogerRogerLoo2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33177Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contactsMeeting abstract