ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

Wu, Wei-MinWei-MinWuChen, Shih-HungShih-HungChenPutcha, VamsiVamsiPutchaPeralagu, UthayasankaranUthayasankaranPeralaguSibaja-Hernandez, ArturoArturoSibaja-HernandezYadav, SachinSachinYadavParvais, BertrandBertrandParvaisAlian, AliRezaAliRezaAlianCollaert, NadineNadineCollaertKer, Ming-DouMing-DouKerGroeseneken, GuidoGuidoGroeseneken2023-01-192022-05-052023-01-1920210739-5159WOS:000786179000003https://imec-publications.be/handle/20.500.12860/39754ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G TelecommunicationsProceedings paper10.23919/EOS/ESD52038.2021.9574716978-1-58537-329-1WOS:000786179000003