Van Huylenbroeck, StefaanStefaanVan HuylenbroeckChew, Soon AikSoon AikChewZhang, BoyaoBoyaoZhangKang, ShuoShuoKangBogaerts, LieveLieveBogaertsDe Messemaeker, JokeJokeDe MessemaekerChery, EmmanuelEmmanuelCheryIacovo, SerenaSerenaIacovoD'havé, KoenKoenD'havéDewilde, SvenSvenDewildeDe Vos, JoeriJoeriDe VosBeyne, EricEricBeyneTokei, ZsoltZsoltTokei2026-09-142026-09-142026979-8-3315-8972-11541-7026https://imec-publications.be/handle/20.500.12860/60357The past years technology aspects of wafer-to-wafer hybrid bonding pitch scaling down to 200nm was documented extensively. This paper discusses specific yield improvement challenges and solutions related to sub-micron scaling, such as wafer-to-wafer bond alignment accuracy, global and local wafer topography control by CMP ensuring void free hybrid bonding, electro-chemical copper corrosion of hybrid pads connected to long metal lines, surface-diffusion-driven copper bulge-out mechanisms, dielectric breakdown and copper diffusion along the bonding interface.engProceedings paper10.1109/irps61424.2026.11499286WOS:001844475300131