High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation

Yamaguchi, ShinpeiShinpeiYamaguchiWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardEneman, GeertGeertEnemanHellings, GeertGeertHellingsFukuda, MasahiroMasahiroFukudaHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooVeloso, AnabelaAnabelaVelosoCrabbe, YvoYvoCrabbeRohr, ErikaErikaRohrFavia, PaolaPaolaFaviaBender, HugoHugoBenderTakeoka, S.S.TakeokaVellianitis, GeorgiosGeorgiosVellianitisWang, Wei-EWei-EWangRagnarsson, Lars-AkeLars-AkeRagnarssonDe Meyer, KristinKristinDe MeyerSteegen, AnAnSteegenHoriguchi, NaotoNaotoHoriguchi2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/20169High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxationProceedings paper