Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

Wang, X.P.X.P.WangLim, A.E.J.A.E.J.LimYu, HongYuHongYuYuLi, M.F.M.F.LiRen, C.C.RenLoh, W.Y.W.Y.LohZhu, C.XC.XZhuChin, A.A.ChinTrigg, A.D.A.D.TriggYeo, Y.C.Y.C.YeoBiesemans, SergeSergeBiesemansLo, G.Q.G.Q.LoKwong, D.L.D.L.Kwong2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13213Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devicesJournal article