Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors

Chen, Kuan-ChuKuan-ChuChenGodfrin, ClementClementGodfrinSimion, GeorgeGeorgeSimionFattal, ImriImriFattalJussot, JulienJulienJussotKubicek, StefanStefanKubicekBeyne, SofieSofieBeyneRaes, BartBartRaesLoenders, ArneArneLoendersKao, Kuo-HsingKuo-HsingKaoWan, DannyDannyWanDe Greve, KristiaanKristiaanDe Greve2025-04-152025-04-152025-MAR 52469-9950WOS:001461657800010https://imec-publications.be/handle/20.500.12860/45536Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistorsJournal article10.1103/PhysRevB.111.125301WOS:001461657800010THERMAL-EXPANSION COEFFICIENTQUANTUMQUBITS