Geens, KarenKarenGeensLi, XiangdongXiangdongLiZhao, MingMingZhaoGuo, WeimingWeimingGuoWellekens, DirkDirkWellekensPosthuma, NielsNielsPosthumaFahle, DirkDirkFahleAktas, OzgurOzgurAktasOdnoblyudov, VladVladOdnoblyudovDecoutere, StefaanStefaanDecoutere2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33020650 V p-GaN gate power HEMTs on 200 mm engineered substratesProceedings paper