Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20MeV protons

Takakura, K.K.TakakuraOhyama, H.H.OhyamaUeda, A.A.UedaNakabayashi, M.M.NakabayashiHayama, K.K.HayamaKobayashi, K.K.KobayashiSimoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeys2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8202Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20MeV protonsJournal article