Mukherjee, ShankhaShankhaMukherjeeBizindavyi, JasperJasperBizindavyiLuo, Y. -CY. -CLuoClima, SergiuSergiuClimaRead, J.J.ReadPopovici, Mihaela IoanaMihaela IoanaPopoviciXiang, YangYangXiangBazzazian, NinaNinaBazzazianBelmonte, AttilioAttilioBelmonteDelhougne, RomainRomainDelhougneKar, Gouri SankarGouri SankarKarCatthoor, FranckyFranckyCatthoorAfanasiev, ValeriValeriAfanasievYu, S.S.YuVan Houdt, JanJanVan Houdt2026-04-272026-04-2720232380-9248https://imec-publications.be/handle/20.500.12860/59222Achieving an energy-efficient, non-volatile memory window (MW) with non-destructive read operation (NDRO) remains a challenge for random access memory, compute-in-memory, and machine learning frameworks. In this work, we report on achieving a record high ferroelectric (FE) capacitive MW (CMW) of ~8.7 at 0 V by introducing an interfacial asymmetry between the electrodes of a fully BEOL compatible HZO-based metal-FE-metal (MFM) FE capacitor (FeCAP). We demonstrate that the CMW can also be read non-destructively using pulses, instead of C-V measurements, which are more reflective of practical charge-based read-circuit implementations. Furthermore, for the first time, we experimentally show that the NDRO leads to a full decoupling of the read- and write-endurance, thereby allowing for a non-destructive read-endurance beyond 1011 cycles even though the write-endurance is limited to ~107 cycles. Moreover, we investigate read voltage optimization to achieve higher CMW while maintaining NDRO and bench-mark the device performance towards system realization.engProceedings paper10.1109/iedm45741.2023.10413879WOS:001693000200219