High Performing 8 Å EOT HfO2 / TaN Low Thermal-Budget n-channel FETs with Solid-Phase Epitaxially Regrown (SPER) Junctions

Ragnarsson, Lars-AkeLars-AkeRagnarssonSeveri, SimoneSimoneSeveriTrojman, LionelLionelTrojmanBrunco, DavidDavidBruncoJohnson, Kevin D.Kevin D.JohnsonDelabie, AnneliesAnneliesDelabieSchram, TomTomSchramTsai, WilmanWilmanTsaiGroeseneken, GuidoGuidoGroesenekenDe Meyer, KristinKristinDe MeyerDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11079High Performing 8 Å EOT HfO2 / TaN Low Thermal-Budget n-channel FETs with Solid-Phase Epitaxially Regrown (SPER) JunctionsProceedings paper