A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages

Kottantharayil, AnilAnilKottantharayilMahapatra, S.S.MahapatraEisele, I.I.Eisele2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7753A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltagesJournal article