Schleich, ChristianChristianSchleichBerens, JudithJudithBerensRzepa, GerhardGerhardRzepaPobegen, GregorGregorPobegenRescher, GeraldGeraldRescherTyaginov, StanislavStanislavTyaginovGrasser, TiborTiborGrasserWaltl, MichaelMichaelWaltl2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33952Physical modeling of bias temperature instabilities in SiC MOSFETsProceedings paperhttps://ieeexplore.ieee.org/document/8993446