Selective wet etching in fabricating SiGe and Ge nanowires for gate-all-around MOSFETs

Liu, W.D.W.D.LiuLee, Y.C.Y.C.LeeSekiguchi, R.R.SekiguchiYoshida, Y.Y.YoshidaKomori, K.K.KomoriWostyn, KurtKurtWostynSebaai, FaridFaridSebaaiHolsteyns, FrankFrankHolsteyns2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/31208Selective wet etching in fabricating SiGe and Ge nanowires for gate-all-around MOSFETsProceedings paperhttps://doi.org/10.4028/www.scientific.net/SSP.282.101