Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing

Mantl, S.S.MantlHolländer, B.B.HolländerHüging, N.N.HügingLuysberg, M.M.LuysbergLenk, S.S.LenkHogg, S.M.S.M.HoggHerzog, H.J.H.J.HerzogHackbarth, T.T.HackbarthLoo, RogerRogerLooBauer, R.R.Bauer2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7859Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealingMeeting abstract