Analysis of dark current in Ge-on-Si photodiodes at cryogenic temperatures

Pizzone, AndreaAndreaPizzoneSrinivasan, AshwynAshwynSrinivasanVerheyen, PeterPeterVerheyenLepage, GuyGuyLepageBalakrishnan, SadhishkumarSadhishkumarBalakrishnanVan Campenhout, JorisJorisVan Campenhout2022-01-062021-11-022022-01-0620202374-0140WOS:000612237500151https://imec-publications.be/handle/20.500.12860/38233Analysis of dark current in Ge-on-Si photodiodes at cryogenic temperaturesProceedings paper978-1-7281-5891-4WOS:000612237500151